Electric-Field Induced F- Migration in Self-Aligned InGaAs MOSFETs and Mitigation
نویسندگان
چکیده
We report, for the first time, a prominent but fully reversible enhancement in transconductance after applying positive gate stress to self-aligned InGaAs MOSFETs. We attribute this to electric-field-induced migration of fluorine ions (F-) introduced during the RIE gate recess process. Fis known to passivate Si donors in InAlAs. In our device structure, an n-InAlAs ledge facilitates the link from the contacts to the intrinsic device. We use secondary ion mass spectroscopy (SIMS) to independently confirm that our process leads to F pile up at the n-InAlAs layer. Transmission line model (TLM) structures confirm F--induced donor passivation. The understanding derived has lead us to redesign our InGaAs MOSFETs by eliminating n-InAlAs layers and instead use an n-InP ledge. The new device design not only exhibits greatly improved electrical stability but also record performance.
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